Topological Schemas of Memory Spaces

Hippocampal cognitive map---a neuronal representation of the spatial environment---is broadly discussed in the computational neuroscience literature for decades. More recent studies point out that hippocampus plays a major role in producing yet another cognitive framework that incorporates not only spatial, but also nonspatial memories---the memory space. However, unlike cognitive maps, memory spaces have been barely studied from a theoretical perspective. Here we propose an approach for modeling hippocampal memory spaces as an epiphenomenon of neuronal spiking activity. First, we suggest that the memory space may be viewed as a finite topological space---a hypothesis that allows treating both spatial and nonspatial aspects of hippocampal function on equal footing. We then model the topological properties of the memory space to demonstrate that this concept naturally incorporates the notion of a cognitive map. Lastly, we suggest a formal description of the memory consolidation process and point out a connection between the proposed model of the memory spaces to the so-called Morris' schemas, which emerge as the most compact representation of the memory structure.Comment: 24 pages, 8 Figures, 1 Suppl. Figur

Robust spatial memory maps encoded in networks with transient connections

The spiking activity of principal cells in mammalian hippocampus encodes an internalized neuronal representation of the ambient space---a cognitive map. Once learned, such a map enables the animal to navigate a given environment for a long period. However, the neuronal substrate that produces this map remains transient: the synaptic connections in the hippocampus and in the downstream neuronal networks never cease to form and to deteriorate at a rapid rate. How can the brain maintain a robust, reliable representation of space using a network that constantly changes its architecture? Here, we demonstrate, using novel Algebraic Topology techniques, that cognitive map's stability is a generic, emergent phenomenon. The model allows evaluating the effect produced by specific physiological parameters, e.g., the distribution of connections' decay times, on the properties of the cognitive map as a whole. It also points out that spatial memory deterioration caused by weakening or excessive loss of the synaptic connections may be compensated by simulating the neuronal activity. Lastly, the model explicates functional importance of the complementary learning systems for processing spatial information at different levels of spatiotemporal granularity, by establishing three complementary timescales at which spatial information unfolds. Thus, the model provides a principal insight into how can the brain develop a reliable representation of the world, learn and retain memories despite complex plasticity of the underlying networks and allows studying how instabilities and memory deterioration mechanisms may affect learning process.Comment: 24 pages, 10 figures, 4 supplementary figure

InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

International audienceWe report on the fabrication and characterization of single nitride nanowire visible-to-ultraviolet p-n photodetec-tors. Nitride nanowires containing 30 InGaN/GaN radial quantum wells with 18% indium fraction were grown by catalyst-free metal-organic vapour phase epitaxy. Single nanowires were contacted using optical lithography. As expected for a radial p-n junction, the current-voltage (I-V) curves of single wire detectors show a rectifying behavior in the dark and a photocurrent under illumination. The detectors present a response in the visible to UV spectral range starting from 2.8 eV. The peak responsivity is 0.17 A/W at 3.36 eV. The on-off switching time under square light pulses is found to be below 0.1 sec

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

International audienceWe report on the demonstration of substrate-freenanowire /polydimethylsiloxane (PDMS) membrane light emitting diodes (LEDs). Metal-organic vapor phase epitaxy (MOVPE)-grown InGaN/GaN core−shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent ITO contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements the samples were manually bonded using silver paint.The EL spectra measured at different applied voltages demonstrate a blue-shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average Indium content

Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires

International audienceA flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane trans- ferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p−n junction nanowires containing InGaN/ GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications